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通过磁控共溅射的方法制备了Bi_2Te_3合金薄膜,并通过423~623 K,1 h热处理提高薄膜的结晶程度。随着热处理温度的升高,Te/Bi原子含量比例逐渐减小,这说明在热处理过程中Te元素有一定的挥发,其挥发量随着温度的升高而增加,这使得薄膜的半导体类型由N型转变为P型,同时赛贝克系数也由负值变为正值。另外,热处理导致了晶粒长大,降低了缺陷密度,使得薄膜的电导率和赛贝克系数等热电性能得到提高。
Bi 2 Te 3 alloy thin films were prepared by magnetron co-sputtering method and the crystallinity of the films was increased by 423 ~ 623 K, 1 h heat treatment. As the heat treatment temperature increases, the content of Te / Bi atoms decreases gradually, which indicates that the Te element volatilizes during the heat treatment and the volatilization increases with the increase of temperature, which makes the semiconductor type of the film N-type into P-type, while the Seebeck coefficient also changed from negative to positive. In addition, the heat treatment led to grain growth, reducing the defect density, making the film conductivity and the Seebeck coefficient thermoelectric properties are improved.