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在许多磁性金属多层膜系统中都存在巨磁电阻效应，这些系统是由厚度为几个纳米的磁层与非磁层交替重叠而构成．出现巨磁电阻效应的必要条件是系统的磁化状态能被外加磁场所改变．该效应的物理原因是传导电子在界面处或磁层内的所谓自旋相关散射．层间耦合随隔离层厚度变化而振荡的现象，在隔离层为非磁过渡金属和贵金属的系统中普遍存在．自旋阀多层结构在信息存储技术中磁电阻“读出”头方面极具应用前景．
Giant magnetoresistance effects exist in many magnetic metal multilayer systems, and these systems consist of alternating overlapping of non-magnetic and non-magnetic layers of a few nanometers in thickness. A necessary condition for the giant magnetoresistance effect is that the magnetization state of the system can be changed by the applied magnetic field. The physical reason for this effect is the so-called spin-dependent scattering of the conducting electrons at the interface or in the magnetic layer. The phenomenon that the interlayer coupling oscillates with the change of the thickness of the isolation layer is ubiquitous in a system where the isolation layer is a non-magnetic transition metal and a precious metal. Spinning valve multi-layer structure in the information storage technology magnetoresistive “read” head very promising.