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本文介绍一种能在Al及Al合金膜上形成陡直的高分辨率图形的刻蚀方法.这种过程是含有离子活性体的等离子体的射频溅射刻蚀,这些活性体能与金属反应而成挥发性的或易被溅射的化合物.由于反应性活性体的存在大大增加了刻蚀速率,而在溅射过程中电场仍保持原有的方向性.在含有Cl_2、Br_2、HCl.HBr或CCl_4分压的射频等离子体中得到的卤素离子活性休可用来进行Al的反应性离子刻蚀.在输入功率为0.6瓦/厘米~2的CCl_4等离子作中刻蚀速率高达5000埃/分钟.讨论了反应速率与功率,反应剂浓度,反应剂流速,温度,气体压力,批量大小和剩余气体的沾污等的共系.还介绍适用作掩膜的各种材料的刻蚀速率数据.
This article describes an etching method that produces steep, high-resolution patterns on Al and Al alloy films, a radio-frequency sputter etch of a plasma containing ionically active species that react with metals Into volatile or easily sputtered compounds due to the presence of reactive active substance greatly increased the etching rate, while the electric field during sputtering to maintain the original direction in containing Cl_2, Br_2, HCl.HBr Or CCl_4 partial pressure RF plasma obtained Halon activity Hugh can be used for reactive ion etching of Al.CCl_4 plasma at an input power of 0.6 W / cm ~ 2 etching rate up to 5000 / min. The reaction rates and power, reactant concentration, reactant flow rate, temperature, gas pressure, batch size and remaining gas contamination are discussed, and the etch rate data for various materials suitable for masking are also presented.