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研究了 As-Te、As-Te-Ga 和 As-Te-Ga-Ge—Si 硫族化合物玻璃半导体的电导率、热激发电流、光电导率和开关效应。发现,电导率σ可由σ=σ_0exp(△E/kT)表示;在300°K～500°K 的温度范围内随着组分的变化,电导率激活能△E 从0.12电子伏变到0.47电子伏。在开关实验中呈现出记忆效应的样品,其电导率与温度的关系曲线呈现记忆效应;在 T=500°K 时的高电导率状态直至室温都保持不变。热淬火给出室温下初始的低电导率。从热激发电流的测量中,发现陷阱中心的能级大约是0.18电子伏和0.23电子伏。在室温下进行了薄样品和厚样品的开关实验。
The conductivity, thermal excitation current, photoconductivity and switching effect of As-Te, As-Te-Ga and As-Te-Ga-Ge-Si chalcogenide glass semiconductors were investigated. It is found that the conductivity σ can be expressed as σ = σ_0exp (ΔE / kT). The conductivity activation energy △ E changes from 0.12 electron volts to 0.47 electron at a temperature range of 300 ° K ~ 500 ° K as the composition changes. Volt. The memory effect was observed in the switching experiments. The conductivity curve showed a memory effect. The high conductivity at T = 500 ° K remained unchanged at room temperature. Hot quenching gives the initial low conductivity at room temperature. From the measurement of the thermal excitation current, the trap level was found to be about 0.18 electron volts and 0.23 electron volts. Switching experiments of thin and thick samples were performed at room temperature.