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使用Ga-AsCl_3-H_2系统和双室反应管的方法,连续生长具有掺铬缓冲层的FET材料.以铬和SnCl_4作掺杂剂分别生长高阻缓冲层和n-n~+层.阐述影响多层外延质量的一些因素和实验结果.用本方法制管的多层外延材料制作C-X波段功率FET,得到了较好的结果.
The growth of FET material with a doping buffer layer was achieved by using the Ga-AsCl 3 -H 2 system and a two-chamber reaction tube. The high-resistance buffer layer and the nn + layer were respectively grown by doping chromium and SnCl 4 as dopants. Some factors of epitaxial mass and experimental results.C-band power FET fabricated by multilayer epitaxial material with this method has good results.