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过临界掺杂的电子转移放大器,也有人称做耿效应放大器,是近几年来发展的一种微波小功率放大器。本文概略介绍这种放大器及电路设计方面的一些资料。在发现电子转移效应(耿效应)的初期,人们已经认识到,电子转移器件有可能表现为稳定的负阻。在适当的低阻抗电路中,尽管器件两端施加了几倍阈值的电压,但可以不产生微波振荡(如像耿二极管振荡器中大家熟知的那种渡越畴振荡)。器件内部具有稳定的静电场分布和稳态的空间电荷分布,而任何空间电荷的扰动都将被抑制。微波信号加到二极管两端时,在器件内部将产生空间电荷波,即电子由阴极向阳极漂移运动
Cross-border doping of electron transfer amplifier, also known as Geng effect amplifier, is developed in recent years, a microwave low-power amplifier. This article gives an overview of some of this amplifier and circuit design information. At the beginning of the discovery of the electron transfer effect (Geng effect), it has been recognized that the electron transfer device may exhibit a stable negative resistance. In suitable low-impedance circuits, microwave oscillations (such as transition-domain oscillations, as is well known in the art of diode diodes) may not be generated despite several times the threshold voltage applied across the device. The device has a stable internal electrostatic field distribution and steady-state space charge distribution, and any space charge disturbance will be suppressed. When the microwave signal is applied to the two ends of the diode, a space charge wave will be generated inside the device, that is, the electrons drift from the cathode to the anode