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Cu films with thickness of about 500nm were deposited on glass substrates without heat-my by DC magnetron sputtering in pure Ar gas of 1.0Pa. The sputtering powers were maintained at 390V×0.274, 4 30V× 0. 70A and 450V×1.04A, and the corresponding deposition rates of Cu film reached 35nm/min, 104nm/min and 167nm/min. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used to observe the structural characteristics of the films. The resistance of the films was measured using four-point probe technique. The amount of larger grains increases and the resistivity of the films decreases evidently with an increase in sputtering power. It is considered that the increase in deposition rate with sputtering power mainly weakens the influence of residual gas atoms on the growing film, and increases substrate and gas temperatures, resulting in the increase in grain size and the decrease in resistivity of the Cu film.
Cu films with thickness of about 500 nm were deposited on glass substrates without heat-my by DC magnetron sputtering in pure Ar gas of 1.0 Pa. The sputtering powers were maintained at 390 V × 0.274, 4 30 V × 0. 70 A and 450 V × 1.04 A, and the corresponding deposition rates of Cu film reached 35 nm / min, 104 nm / min and 167 nm / min. X-ray diffraction, scanning electron microscopy and atomic force microscopy were used to observe the structural characteristics of the films. The resistance of the films was The amount of larger grains increases and the resistivity of the films decreases evidently with an increase in sputtering power. It is considered that the increase in deposition rate with sputtering power mainly weakens the influence of residual gas atoms on the growing film, and increasing substrate and gas temperatures, resulting in the increase in grain size and the decrease in resistivity of the Cu film.