论文部分内容阅读
用类似液相外延的设备,测定了Ga与 As在450℃至 550℃间在 Au-Ge和 Au-Ge-Ni熔体中的溶解度.发现温度升高,Ga与As的溶解度增加,但由于As的逸损,在熔体中 Ga与As的比例也增大.自Au-Ge的共晶组份起,Au含量的提高和Ni的加入均使Ga和As的溶解度增加.自热力学活度角度讨论了溶解度提高的原因.测定了Au-Ge与Au-Ge-Ni(或Fe、Cr、Co)系统的比接触电阻,并结合溶解度的实验和热力学活度的计算进行了讨论.分析了各组份对欧姆接触比接触电阻的影响.
The solubility of Ga and As in Au-Ge and Au-Ge-Ni melts between 450 ℃ and 550 ℃ was measured by means of liquid-phase epitaxy.The solubility of Ga and As was found to increase with increasing temperature, but due to The loss of As and the ratio of Ga to As in the melt also increase.The solubility of Ga and As increases with the increase of Au content and the addition of Ni since the eutectic composition of Au-Ge. The reason for the increase of solubility was discussed.The specific contact resistance of Au-Ge with Au-Ge-Ni (or Fe, Cr, Co) system was measured and the calculation of the solubility and thermodynamic activity was discussed. Influence of Components on Ohmic Contact to Contact Resistance.