A LOW-NOISE 1.2—1.8 GHz COOLED GaAs FET AMPLIFIER

• 作 者: 曹逸庭
• 机 构: Purple Mountain Observatory Academia Sinica,
• 出 处: Journal of Electronics(China)
• 发表日期: 1988年02期
• 关键词: amplifier mixer instrument NOISE cooled ambient 空芯 linearity versus lowest

A low-noise 1.2—1.8 GHz cooled GaAs FET amplifier with mixer bias circuit isreported.The amplifier noise temperature obtained at an ambient temperature of 20 K in thefrequency range of 1.2—1.7 GHz is 10K.The lowest noise temperature is 4K.The gain is about 30 dB.An automatic measuring instrument for noise temperature was designed.The noise effect of the inputcable and the error analysis of the total measurement were made.The total measurement error is 2K.

A low-noise 1.2-1.8 GHz cooled GaAs FET amplifier with mixer bias circuit isreported. The amplifier noise temperature obtained at an ambient temperature of 20 K in the frequency range of 1.2-1.7 GHz is 10K. is about 30 dB. An automatic measuring instrument for noise temperature was designed. The noise effect of the input can and the error analysis of the total measurement were made. The total measurement error is 2K.