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基于传统双向可控硅(DDSCR)提出了两种静电放电(ESD)保护器件,可应对正、负ESD应力从而在2个方向上对电路进行保护。传统的DDSCR通过N-well与P-well之间的雪崩击穿来触发,而提出的新器件则通过嵌入的NMOS/PMOS来改变触发机制、降低触发电压。两种改进结构均在0.18μmRFCMOS下进行流片,并使用传输线脉冲测试系统进行测试。实验数据表明,这两种新器件具有低触发电压、低漏电流(～nA),抗ESD能力均超过人体模型2kV,同时具有较高的维持电压(均超过3.3V),可保证其可靠地用于1.8V、3.3V I/O端口而避免出现闩锁问题。
Two types of ESD protection devices are proposed based on conventional two-way thyristors (DDSCRs) that can handle positive and negative ESD stress to protect the circuit in two directions. While the traditional DDSCR is triggered by avalanche breakdown between N-well and P-well, the proposed new device changes the triggering mechanism and reduces the trigger voltage with the embedded NMOS / PMOS. Both improved structures were streamed at 0.18μm RFFCOS and tested using a transmission line pulse test system. Experimental data show that these two new devices with low trigger voltage, low leakage current (~ nA), anti-ESD capability than the human body model 2kV, while maintaining a high voltage (both more than 3.3V), to ensure its reliable Used for 1.8V, 3.3VI / O ports to avoid latch-up problems.