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本文叙述离子注入在制作GaAsFET中的应用情况,以及与此有关的退火及衬底选择问题,最后介绍一些用离子注入制作的GaAsFET的性能结果。
This article describes the application of ion implantation in the fabrication of GaAsFETs, as well as the related annealing and substrate selection problems. Finally, some performance results of GaAsFET fabricated by ion implantation are introduced.