Growth of β-Ga_2O_3 nanorods by ammoniating Ga_2O_3/V thin films on Si substrate

• 作 者: 王公堂 薛成山 杨兆柱
• 机 构: College of Physics and Electronics,Shandong Normal University,
• 出 处: Chinese Physics B
• 发表日期: 2008年04期
• 关键词: monoclinic diameters briefly sputtering typically crystalline sized nanotubes SA

This paper reports that β-Ga2O3 nanorods have been synthesized by ammoniating Ga2O3 films on a V middle layer deposited on Si(111) substrates.The synthesized nanorods were confirmed as monoclinic Ga2O3 by x-ray diffraction,Fourier transform infrared spectra.Scanning electron microscopy and transmission electron microscopy reveal that the grown β-Ga2O3 nanorods have a smooth and clean surface with diameters ranging from 100 nm to 200 nm and lengths typically up to 2 μm.High resolution TEM and selected-area electron diffraction shows that the nanorods are pure monoclinic Ga2O3 single crystal.The photoluminescence spectrum indicates that the Ga2O3 nanorods have a good emission property.The growth mechanism is discussed briefly.

This paper reports that β-Ga2O3 nanorods have been synthesized by ammoniating Ga2O3 films on a V middle layer deposited on Si (111) substrates. The synthesized nanorods were confirmed as monoclinic Ga2O3 by x-ray diffraction, Fourier transform infrared microscopy. Scanning electron microscopy and transmission electron microscopy that that grown β-Ga2O3 nanorods have a smooth and clean surface with diameter ranging from 100 nm to 200 nm and ends typically up to 2 μm. High resolution TEM and selected-area electron diffraction shows that the nanorods are pure monoclinic Ga2O3 single crystal.The photoluminescence spectrum indicates that the Ga2O3 nanorods have a good emission property.The growth mechanism is discussed briefly.