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硅基ＭＩＳ隧道发光二极管为制造用于超大规模集成电路的硅基发光器件提供了可能性．报道了ＭＩＳ隧道发光二极管（ＭＩＳＬＥＴＤ）的制作过程、电流－电压和发射光谱特性，讨论了负阻现象和发光机理
Silicon-based MIS tunneling light-emitting diodes offer the possibility of fabricating silicon-based light-emitting devices for very large scale integrated circuits. The fabrication process, current-voltage and emission spectra of MIS tunneling diode (MISLETD) were reported. The negative resistance phenomenon and the luminescence mechanism