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针对低阈值半导体量子结构激光器（简称量子结构激光器），包括量子阱、量子线和量子点结构，给出了一个完整简便的方法用以优化设计最低阈值条件所需要的有源区结构。以对数形式给出了量子结构激光器材料增益和注入载流子浓度的关系，并且以ＩｎＧａＡｓ（Ｐ）／ＩｎＰ量子阱激光器和ＩｎＡｓ／ＧａＡｓ自组装量子点结构激光器为例，分别计算了为得到最低阈值电流所需要的量子阱阱数和自组装量子点的面密度以及激光器的腔长。
For low threshold semiconductor quantum structured lasers, including quantum wells, quantum wires and quantum dot structures, a complete and easy method is presented to optimize the active region structure required to design the lowest threshold condition. In the logarithmic form, the relationship between the gain of the quantum structure laser and the injected carrier concentration is given. Taking the InGaAs (P) / InP quantum well laser and the InAs / GaAs self-assembled quantum dot structure laser as an example, The number of well traps required for the lowest threshold current, the areal density of self-assembled quantum dots, and the cavity length of the laser.