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利用霍尔效应获得迁移率参数,不仅是常规的硅材料基本测量手段,而且在III-V族MBE的材料与工艺表征方面有着广泛的应用.为提高效率,许多自动测量的方法应运而生.利用磁阻测量来确定半导体材料的补偿度也是实验室常用的方法. 为了方便地测得半导体材料的迁移率、载流子浓度、电阻率和磁阻等,利用一台APPLE-II微机、一台带IEEE488接口的数字万用表,辅之以控制用继电器阵列,构成了一套程控的范德堡测量系统.由于采用范德堡方法,样品的形状可以是任意的.在电阻率测量方面,可进行超薄层测量,弥补了四探针的不足. 本系统直接测得的参数为方块电阻R°_(?)、霍尔系数R_H及载流子类型.由下列关系
The use of Hall effect to obtain the mobility parameter is not only the basic measure of silicon material, but also widely used in the material and process characterization of Group III-V MBE.In order to improve the efficiency, many automatic measurement methods emerge as the times require. Magnetoresistive measurement to determine the degree of compensation of semiconductor materials is also a common laboratory method.In order to easily measure the mobility of semiconductor materials, carrier concentration, resistivity and reluctance, etc., using an APPLE-II microcomputer, a A digital multimeter with IEEE488 interface, supplemented by a control relay array, forms a set of programmed Vanderbilt measurement systems. The shape of the sample can be arbitrary due to the Vanderbilt method. In terms of resistivity measurement, Thin layer measurement to make up for the lack of four probes.The direct measurement of the system parameters for the box resistance R ° _ (?), Hall coefficient R_H and carrier type by the following relationship