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通过结构为ITO/2T-NATA(20nm/NPBx(20nm)/MCzHQZn(30nm)/BCP(10nm)/Alq3(20nm)/LiF(0.5nm)/Al、ITO/2T-NATA(30nm/MCzHQZn(30nm)/BCP(10nm)/Alq3(30nm)/LiF(0.5nm)/Al和ITO/2T-NATA(20nm/MCzHQZn(30nm)/NPBx(16nm)/BCP(10nm)/Alq3(25nm)/LiF(0.5nm)/Al的3组有机电致发光器件(OLED),证明了MCzHQZn既具有空穴传输特性,又具有较好的发光特性。MCzHQZn在器件1中作发光层,器件最大亮度在电压16V时达到3692cd/m2,电压13V时的最大效率为0.90cd/A,发光的峰值波长为564nm;MCzHQZn在器件2中既作发光层又作空穴传输层,器件最大亮度在电压为13V时达到1929cd/m2,电压12V时的最大效率为0.57cd/A,发光的峰值波长也为564nm;MCzHQZn在器件3中作空穴传输层,由NPBx作发光层,器件最大亮度在电压为14V时达到3556cd/m2,电压9V时的最大效率为1.08cd/A,发光的峰值波长为444nm。
The ITO / 2T-NATA (30 nm / MCzHQZn (30 nm) / ITO / 2T-NATA / 20 nm / NPBx (20 nm) / MCzHQZn (30 nm) / BCP (10 nm) / Alq3 ) / BCP (10nm) / Alq3 (30nm) / LiF (0.5nm) / Al and ITO / 2T-NATA (20nm / MCzHQZn (30nm) / NPBx (16nm) / BCP (10nm) / Alq3 (25nm) / LiF 0.5nm) / Al three groups of organic electroluminescent devices (OLED), proved that MCzHQZn has both hole transport characteristics, but also has better light-emitting characteristics.MCzHQZn in the device for a light-emitting layer, the device maximum brightness at a voltage of 16V When it reaches 3692 cd / m 2, the maximum efficiency at voltage of 13 V is 0.90 cd / A and the peak wavelength of light emission is 564 nm. MCzHQZn is used as both the light emitting layer and the hole transporting layer in device 2, and the maximum brightness of the device reaches at a voltage of 13 V 1929cd / m2, the maximum efficiency of the voltage of 12V is 0.57cd / A, the peak wavelength of light emission is also 564nm; MCzHQZn as the hole transport layer in the device 3, made of NPBx for the light emitting layer, the maximum brightness of the device reached at a voltage of 14V 3556cd / m2, the maximum efficiency of the voltage of 9V 1.08cd / A, the peak wavelength of 444nm.