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A novel low specific on-resistance(Ron,sp) lateral double-diffused metal oxide semiconductor(LDMOS) with a buried improved super-junction(BISJ) layer is proposed. A super-junction layer is buried in the drift region and the P pillar is split into two parts with different doping concentrations. Firstly, the buried super-junction layer causes the multiple-direction assisted depletion effect. The drift region doping concentration of the BISJ LDMOS is therefore much higher than that of the conventional LDMOS. Secondly, the buried super-junction layer provides a bulk low on-resistance path. Both of them reduce Ron,sp greatly. Thirdly, the electric field modulation effect of the new electric field peak introduced by the step doped P pillar improves the breakdown voltage(BV). The BISJ LDMOS exhibits a BV of 300 V and Ron,sp of 8.08 mΩ·cm2which increases BV by 35% and reduces Ron,sp by 60% compared with those of a conventional LDMOS with a drift length of15 μm, respectively.
A novel low-specific on-resistance (Ron, sp) lateral double-diffused metal oxide semiconductor (LDMOS) with buried high super junction (BISJ) layer is proposed. The drift region doping concentration of the BISJ LDMOS is therefore much higher than that of the conventional LDMOS. Secondly, the buried super-junction layer causes the multiple-direction assisted depletion effect. Both of them reduce Ron, sp greatly. Thirdly, the electric field modulation effect of the new electric field peak introduced by the step doped P-pillar improves the breakdown voltage (BV ). The BISJ LDMOS exhibits a BV of 300 V and Ron, sp of 8.08 mΩ · cm2which increases BV by 35% and reduces Ron, sp by 60% compared to those of conventional LDMOS with a drift length of 15 μm, respectively.