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研究了热丝化学气相沉积(HFCVD)方法在Ta衬底上制备B掺杂金刚石(BDD/Ta)薄膜电极的极化特性。扫描电镜(SEM)和Raman光谱显示,BDD/Ta薄膜电极具有较好的成膜质量。电化学测试表明,BDD/Ta薄膜电极具有比常规电极如Pt、IrO2和RuO2更宽的电势窗口,在Na2SO4溶液中的电势窗口为4.1V(-1.8V～+2.3V vs SCE),电势窗口受沉积C源浓度和支持电解液PH值的影响。BDD/Ta薄膜电极在[Fe(CN)6]3-/4-体系中电化学反应具有良好的准可逆性,其动力学主要是受扩散过程所控制。紫外-可见吸收光谱显示,BDD/Ta薄膜电极能够有效阳极电催化降解苯酚,降解过程中化学需氧量(COD)去除率达98.6%。
The polarization characteristics of B-doped diamond (BDD / Ta) thin film electrodes fabricated on Ta substrate by hot filament chemical vapor deposition (HFCVD) were studied. Scanning electron microscopy (SEM) and Raman spectroscopy showed that the BDD / Ta thin film electrode had better film quality. Electrochemical tests show that the BDD / Ta thin film electrode has a wider potential window than conventional electrodes such as Pt, IrO2 and RuO2. The potential window in Na2SO4 solution is 4.1V (-1.8V ~ + 2.3V vs SCE). The potential window Affected by the C concentration of the deposition and the pH of the supporting electrolyte. The electrochemical reaction of BDD / Ta thin film electrode in [Fe (CN) 6] 3- / 4- system has good quasi-reversibility and its kinetics are mainly controlled by the diffusion process. UV-visible absorption spectra showed that BDD / Ta thin film electrode could effectively catalyze the electrocatalytic degradation of phenol. The removal rate of chemical oxygen demand (COD) reached 98.6% during degradation.