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为获得高分辨率和长寿命的电致发光显示板,本文研究了薄膜电致发光器件选址用的高压多晶硅薄膜晶体管(TFT)矩阵。结果,对于32×32点矩阵器件,其源、漏极间的正反向击穿电压都达到100V,并且在0—22V门电压之间的开/关电流比为3×10~3。由于采用激光退火和补偿门结构,制备出交流显示用的高压多晶硅薄膜晶体管,此TFT电路可以驱动电致发光器件。由于多晶硅薄膜被用作薄膜晶体管的半导体,就可应用硅的大规模集成电路工艺来得到高分辨率TFT矩阵,而且不存在化学计量的问题,可以将高质量的热生长氧化物用作门绝缘体。所以,为获得长寿命显示板,已能够制备稳定的硅薄膜晶体管。
In order to obtain high-resolution and long-life electroluminescent display panel, this paper studies the high voltage polysilicon thin film transistor (TFT) matrix for the location of thin film electroluminescent devices. As a result, the forward and reverse breakdown voltage between the source and the drain reaches 100V for a 32 × 32 dot matrix device, and the on / off current ratio between 0-22V gate voltage is 3 × 10-3. Due to the structure of laser annealing and compensation door, a high-voltage polysilicon thin film transistor for AC display is prepared, and the TFT circuit can drive the electroluminescent device. Since polysilicon films are used as semiconductors for thin film transistors, high-resolution TFT matrices can be obtained using silicon LSI technology without the problem of stoichiometry, and high quality, thermally grown oxide can be used as a gate insulator . Therefore, to obtain a long life display panel, it has been possible to produce a stable silicon thin film transistor.