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We have investigated the AlGaInAs/InP compressively strained layer separate confinement heterostructure multiquantum well(SCH|MQW) laser structure, which was grown by Low|Pressure Metalorganic Vapor phase Epitaxy. The T 0 of AlGaInAs/InP SCH|MQW buried|heterostructure lasers was up to 110K at temperatures between 20℃ and 60℃. The drop of slope efficiencies was only 0 54dB at temperatures between 20℃ and 80℃.
We have investigated the AlGaInAs / InP compressively strained layer separate confinement heterostructure multiquantum well (SCH | MQW) laser structure, which was grown by Low | Pressure Metalorganic Vapor Phase Epitaxy. The T 0 of AlGaInAs / InP SCH MQW buried | heterostructure lasers was up to 110 K at temperatures between 20 ° C and 60 ° C. The drop of slope efficiencies was only 0 54 dB at temperatures between 20 ° C and 80 ° C.