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对理想晶体中的H扩散通量与充H时间的关系式进行修正,并用修正后的公式直接从实验数据中拟合H在材料中的扩散系数和穿透时间,结果表明,用理想晶体中H扩散通量随充H时间变化的修正关系式可以表征实际材料在电化学充H过程中的H原子扩散通量随充H时间变化的关系曲线,也可以用以研究实际材料中H陷阱对H原子扩散系数的作用.用修正后的公式对20g纯净钢电化学充H实验数据进行最小二乘法拟合,直接得到H原子在不同H陷阱状态20g纯净钢中的扩散系数和穿透时间.拟合结果显示:20g纯净钢中的不可逆H陷阱对H原子的扩散系数没有影响,只是延长了H原子的穿透时间,而可逆H陷阱则降低了H原子的扩散系数.
The relationship between the H diffusion flux in the ideal crystal and the charge H time is corrected. The diffusion coefficient and penetration time of H in the material are directly fitted from the experimental data with the corrected formula. The results show that with the ideal crystal H diffusion flux changes with the charge H time can be used to characterize the relationship between the modified H charge diffusion process of the H charge diffusion process with charge H time variation curve can also be used to study the actual material H trap pair H atom diffusivity.The diffusion coefficient and penetration time of H atom in 20g pure steel with different H-trap states were directly obtained by the least squares fitting of experimental data of 20g pure steel electrochemical charge by a modified formula. The fitting results show that the irreversible H trap in 20g pure steel has no influence on the diffusion coefficient of H atom, but prolongs the penetration time of H atom, while the reversible H trap reduces the diffusion coefficient of H atom.