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系统地报道和探讨了在研究间接耦合光电探测结构光致负阻特性中所发现的一系列实验现象．在对这些实验现象综合分析的基础之上，提出了一种由一横向ＰＮＰＮ四重结构与一纵向ＮＰＮ管相互作用所产生的负阻效应的新模型．利用负阻峰域载流子特殊的输运机制，设计和研制出了上升、下降时间均为２ｎｓ左右，内部电流增益大于３０倍的硅光电探测单元器件．
A series of experimental phenomena discovered in the study of the photo-induced negative resistance characteristics of indirectly coupled photodetection structures are systematically reported and discussed. Based on the comprehensive analysis of these experimental phenomena, a new model of negative resistance effect caused by the interaction of a quadrilateral PNPN structure with a vertical NPN tube is proposed. The special phototransmitter mechanism of negative resistance peak carrier is used to design and develop a silicon photodetection cell device whose rising and falling time are about 2ns and whose internal current gain is more than 30 times.