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一、前言由于集成电路和微波半导体器件的发展,要求硅外延片的外延层薄,界面杂质浓度分布陡。通常采用的四氯化硅氢还原法是不能满足这个要求的。硅烷热分解反应法却能满足,因为其反应温度较低(950～1050℃),反应是不可逆的,没有副产物,可减轻自掺杂,能获得很陡的杂质分布,可得到电阻率均匀的1微米左右的薄外延膜。对于异质外延,在尖晶石上外延硅的实验证明:四氯化硅有腐蚀作用,只能用硅烷热分解法。在蓝宝石上硅烷热分解法生成的硅膜,其孪晶缺陷低于四氯化硅沉积生长的硅膜。生成
I. INTRODUCTION Due to the development of integrated circuits and microwave semiconductor devices, the epitaxial layer of silicon epitaxial wafer is required to be thin, and the impurity concentration at the interface is steep. The commonly used silicon tetrachloride hydrogen reduction method can not meet this requirement. Silane thermal decomposition reaction method can meet, because the reaction temperature is low (950 ~ 1050 ℃), the reaction is irreversible, there is no by-product, can reduce self-doping, can obtain very steep impurity distribution, can be uniform resistivity Thin film about 1 micron thin film. For heteroepitaxy, epitaxial silicon on spinel experiments show that: silicon tetrachloride corrosion, only silane thermal decomposition method. Silicon films formed by thermal decomposition of silane on sapphire have lower twin defects than those grown on silicon tetrachloride. generate