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选用FUJITSU公司的GaAs HEMT管芯FHX13X,采用负反馈技术设计制作了一个小型化宽频带超低噪声放大器。利用ADS软件进行设计、优化和仿真,采用电阻负反馈改善电路频响特性,实现较好的输入输出匹配特性,同时引入电抗元件补偿管芯高频增益的下降,实现较好的动态特性。采用三级放大的电路结构形式实现了工作频率在6GHz～18GHz内,增益大于30dB,噪声系数小于1.5dB,1dB压缩点输出功率大于10dBm,带内平坦度为±2.0dB,输入输出驻波比<2。放大器的外形尺寸仅为10.9mm×9.8mm×2.7mm。
Selection of FUJITSU GaAs HEMT die FHX13X, the use of negative feedback technology designed a miniaturized broadband ultra-low noise amplifier. ADS software is used to design, optimize and simulate. The negative feedback of resistance is used to improve the frequency response of the circuit to achieve better input-output matching characteristics. At the same time, the reactance component is used to compensate the decline of the high-frequency gain of the die to achieve better dynamic characteristics. A three-stage amplifier is adopted to realize the working frequency of 6GHz ~ 18GHz, the gain is greater than 30dB, the noise figure is less than 1.5dB, the output power of 1dB compression point is greater than 10dBm, the in-band flatness is ± 2.0dB, the input / output VSWR <2. Amplifier dimensions only 10.9mm × 9.8mm × 2.7mm.