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Using the four-probe method, we investigate the electrical conductivity of Cu3N under high pressure with the diamond anvil cell.
,Metallization of Cu3N Semiconductor under High Pressure
【摘 要】
：
Using the four-probe method, we investigate the electrical conductivity of Cu3N under high pressure with the diamond anvil cell.
【机 构】
：
Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080
【出 处】
：
中国物理快报（英文版）
【发表日期】
：
2006年2期
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