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叙述了从直流以及1兆赫电容和1兆赫电压增益来确定微波砷化镓金属-半导体场效应晶体管(GaAs MESFET)的等效电路参数的测量技术。用该技术确定的商用的1微米栅长GaAs MESFET的等效电路参数与从2～4千兆赫下测量的散射参数推导的参数作了比较。
The measurement technique for determining the equivalent circuit parameters of a microwave gallium arsenide metal-semiconductor field-effect transistor (GaAs MESFET) from dc and 1 MHz capacitors and 1 MHz voltage gain is described. The equivalent circuit parameters of a commercially available 1 micron gate-length GaAs MESFET as determined by this technique were compared to those derived from the scattering parameters measured at 2 to 4 GHz.