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对自对准 In Ga P/ Ga As HBT单片集成跨阻放大器进行了研究 .采用发射极金属做腐蚀掩膜并利用 Ga As腐蚀各向异性的特点来完成 BE金属自对准工艺 ,最终制作出的器件平均阈值电压为 1.15 V,单指管子电流增益为5 0 ,发射极面积 4μm× 14μm的单管在 IB=2 0 0μA和 VCE=2 V偏压条件下截止频率达到了 4 0 GHz.设计并制作了直接反馈和 CE- CC- CC两种单片集成跨阻放大器电路 ,测量得到的跨阻增益在 3d B带宽频率时分别为 5 0 .6 d BΩ和 4 5 .1d BΩ ,3d B带宽分别为 2 .7GHz和 2 .5 GHz,电路最小噪声系数分别为 2 .8d B和 3.2 d B.
A self-aligned In Ga P / Ga As HBT monolithically integrated transimpedance amplifier was studied.The BE metal self-aligned process was completed by using the emitter metal as an etching mask and utilizing the Ga As etchant anisotropy, and finally fabricated The average threshold voltage of the device is 1.15 V, the single tube current gain is 50, and the single-tube with the emitter area of 4 μm × 14 μm has a cutoff frequency of 40 GHz under IB = 200μA and VCE = 2V bias The design and fabrication of two monolithic integrated transimpedance amplifier circuits, direct feedback and CE-CC-CC, respectively, the measured transconductance gain is respectively 50.6 d BΩ and 45.1 d BΩ at 3dB bandwidth frequency, The 3dB bandwidth is respectively 2.7GHz and 2.5GHz, and the minimum noise figure of the circuit is 2.8dB and 3.2dB, respectively.