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自1980年以来,激光微区化学成为激光化学的一个重要分支,预计在微电子器件制造工业中会得到迅速的应用。由于激光的高空间分辨率和高强度,可把界面上化学反应限制在一个很小的区域内,而且不需要加热基片就能诱发化学反应。因此,激光界面化学为制造微电子器件提供一系列新的技术。目前,要制作高密度和复杂的集成电路或其它电子元件,工艺上遇到较大的困难,因此寻找新的工艺方法对微电子工业发展极为重要。最近,在大规模集成电路技术发展中,采用了许多先进的工艺,例如反应离子腐蚀(RIE),等离子体化学汽相淀积(PCVD)等。然而,等离子体中含有的离子和电子等带电粒子,会使元件造成损伤。就RIE而言,由于离子冲击
Since 1980, laser micro-area chemistry has become an important branch of laser chemistry and is expected to gain rapid adoption in the microelectronic device manufacturing industry. Due to the high spatial resolution and high intensity of the laser, the chemical reaction at the interface can be confined to a small area and the chemical reaction can be induced without heating the substrate. Therefore, laser interface chemistry offers a range of new technologies for manufacturing microelectronic devices. Currently, to make high-density and complex integrated circuits or other electronic components, the process encountered greater difficulties, so to find a new process for the development of microelectronics industry is extremely important. Recently, many advanced technologies such as reactive ion etching (RIE), plasma chemical vapor deposition (PCVD) and the like have been adopted in the development of large-scale integrated circuit technology. However, the plasma contains ions and electrons and other charged particles, will cause damage to the components. For RIE, due to ion impact