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选择Li_2O—V_2O_5作为助熔剂,在870℃的外延温度下,成功地外延生长了掺Ag的LiN_bO_3单晶薄膜。直接的和用光学显微镜观察表明薄膜表面是光滑平整和透明的;电子显微镜照片显示出基片和薄膜的界面十分明显;X—射线衍射曲线给出明显分开的基片与薄膜衍射峰证实了薄膜具有极好单晶性。利用生长的薄膜作了光波导试验,耦合出了TE模。
Li_2O-V_2O_5 was selected as a flux to successfully epitaxial growth of Ag-doped LiN_bO_3 single crystal thin films at the epitaxial temperature of 870 ℃. Direct and visual observation with an optical microscope showed that the surface of the film was smooth and transparent; the electron micrograph showed a clear interface between the substrate and the film; the X-ray diffraction curves gave clearly separated diffraction peaks of the substrate and the film confirmed the film Has excellent single crystal. An optical waveguide test was conducted using the grown film to couple out the TE mode.