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１９９８年１０月在日本奈良举行的第１６届ＩＥＥＥ国际半导体激光会议吸引了来自世界各地的３００多各科学家和研究人员，其内容覆盖了二极管激光器的各个研究领域。日益明显的是砷化磷化铟镓（ＩｎＧａＡｓＰ）激活二极管（无铝激活）正在０．７０～０．８３μｍ波长范...
The 16th IEEE International Laser Conference in October 1998 in Nara, Japan attracted over 300 scientists and researchers from all over the world and covered various research fields of diode lasers. It is becoming increasingly clear that indium gallium arsenide phosphide (InGaAsP) activated diodes (without aluminum activation) are in the 0.70 ~ 0.83μm wavelength range ...