论文部分内容阅读
针对准第四代无线通信技术TD-LTE中2.570~2.620 GHz频段的应用,设计了一款基于IBM SiGe BiCMOS7WL工艺的射频功率放大器。该功率放大器工作于AB类,采用单端结构,由两级共发射极电路级联构成,带有基极镇流电阻,除两个谐振电感采用片外元件外,其他全部元件均片上集成,芯片面积为(1.004×0.736)mm2。测试结果表明,在3.3 V电源电压下,电路总消耗电流为109 mA,放大器的功率增益为16 dB,输出1 dB增益压缩点为15 dBm。该驱动放大器具有良好的输入匹配,工作稳定。
In order to apply the 2.570 ~ 2.620 GHz frequency band in TD-LTE, which is the fourth-generation wireless communication technology, an RF power amplifier based on the IBM SiGe BiCMOS7WL process was designed. The power amplifier work in class AB, single-ended structure, cascaded by two cascode circuit, with base ballast resistor, with the exception of two resonant inductor chip components, all other components are integrated on-chip, The chip area is (1.004 × 0.736) mm2. The test results show that the total current consumption of the circuit is 109 mA at a supply voltage of 3.3 V, the power gain of the amplifier is 16 dB, and the output 1 dB gain compression point is 15 dBm. The driver amplifier has good input matching, stable operation.