Incorporation of Ag into Cu(In,Ga)Se2 films in low-temperature process

• 作 者: Zhaojing Hu Yunxiang Zhang Shuping Lin Shiqing Cheng Zhichao He Chaojie Wang Zhiqiang Zhou Fangfang Liu Yun Sun Wei Liu
• 机 构: Institute of Photoelectronic Thin Film Devices and Technology of Nankai University,Key Laboratory of
• 出 处: 中国光学快报（英文版）
• 发表日期: 2021年11期
• 关键词: Cu[In Ga]Se2 thin film low-temperature deposition process Ag doping crystallinit

Chalcopyrite Cu(In,Ga)Se2[CIGS]thin films deposited in a low-temperature process[450℃]usually produce fine grains and poor crystallinity.Herein,different Ag treatment processes,which can decrease the melting temperature and enlarge band gap of the CIGS films,were employed to enhance the quality of thin films in a low-temperature deposition process.It is demonstrated that both the Ag precursor and Ag surface treatment process can heighten the crystallinity of CIGS films and the device efficiency.The former is more obvious than the latter.Furthermore,the Urbach energy is also reduced with Ag doping.This work aims to provide a feasible Ag-doping process for the high-quality CIGS films in a low-temperature process.