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用高压回流技术生长碲镉汞单晶时由于合成、淬火和单晶生长均在同一个高压回流炉内进行,因此简化了晶体的生长工艺。另外,采用开口的石英安瓿作为料管,可消除由于高的汞汽压而引起的爆炸问题。用高压回流技术生长的碲镉汞单晶结构完整、组份均匀、尺寸大(Ф25×60mm),并能满足制作多元器件的要求。因此,高压回流技术是目前国外碲镉汞单晶研制中的一项先进技术。本文对高压回流技术中如何实现温度和压
Growth of HgCdTe single crystals with high-pressure reflow technology is facilitated by the synthesis, quenching and single crystal growth in the same high pressure reflow oven, thus simplifying the crystal growth process. In addition, the use of an open quartz ampule as a tube eliminates the problem of explosion due to high mercury vapor pressure. The HgCdTe single crystal grown by high-pressure reflow technology has the advantages of complete structure, uniform composition and large size (Ф25 × 60mm), and can meet the requirements of manufacturing multiple components. Therefore, the high-pressure reflux technology is currently an advanced technology in the development of HgCdTe single crystal abroad. How to Realize Temperature and Pressure in High Pressure Reflow Technology