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利用分子束外延技术和 S- K生长模式 ,系统研究了 In As/Ga As材料体系应变自组装量子点的形成和演化 .研制出激射波长λ≈ 960 nm,条宽 1 0 0μm,腔长 80 0μm的 In( Ga) As/Ga As量子点激光器 :室温连续输出功率大于 3.5W,室温阈值电流密度 2 1 8A/cm2 ,0 .61 W室温连续工作寿命超过 3760小时
Using molecular beam epitaxy and S-K growth mode, the formation and evolution of strained self-assembled quantum dots in In As / GaAs system have been systematically investigated. The lasing wavelength λ ≈ 960 nm, stripe width 100 μm, cavity length 80 0μm In (Ga) As / GaAs Quantum Dot Laser: Continuous Output Power at Room Temperature Greater than 3.5W, Room Temperature Threshold Current Density 2 1 8A / cm2, 0.61 W Room Temperature Continuous Working Life More Than 3760 Hours