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本文提出了一种计算LDD(Light-Doped Drain)MOSFET表面横向电场的解析模型.该模型含LDD MOSFET几何和掺杂参数,可用以计算具有不同长度、结深及掺杂的轻掺杂漏区的LDD MOSFET表面横向电场,并可计算常规MOSFET和缓交漏MOSFET的表面横向电场.用该模型算得结果与用FD-MINIMOS进行数值计算得到的结果相符.基于该模型算得的电场结果,可计算衬底电流,并进而计算击穿电压.该模型可十分简便地确定LDDMOSFET的最佳几何参数的掺杂参数,为LDD MOSFET的设计提供便利的工具和快速的参数提取方法.
In this paper, an analytical model for calculating the transverse electric field of a LDD (Light-Doped Drain) MOSFET surface is proposed. The model includes LDD MOSFET geometries and doping parameters that can be used to calculate lightly doped drain regions of different lengths, junction depths and doping Of the lateral electric field of the LDD MOSFET surface and calculate the lateral electric field of the surface of the conventional MOSFET and the slow-leakage MOSFET.The calculated results are in good agreement with those obtained by FD-MINIMOS. Based on the electric field results calculated by this model, And then calculate the breakdown voltage.The model can be very simple and easy to determine the doping parameters of LDDMOSFET the best geometric parameters to facilitate the design of LDD MOSFET tools and rapid parameter extraction method.