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Ballistic spin transport in spin field-effect transistors is studied by taking into account the Rashba spinorbit coupling, interracial scattering, and band mismatch. It is shown that the spin conductance oscillation with the semiconductor channel length is a superimposition of the Rashba spin precession and spin interference oscillations. They have different oscillation periods π/k_R and π/k with k_R the Rashba wavevector and k the Fermi wavevector of thesemiconductor channel, and play different parts of slow and rapid oscillations, depending upon the relative magnitude ofπ/k_R and π/k. Only at k=k_R does the spin conductance exhibit oscillations of a single period. Two types of different behaviors of the tunnelling magnetoresistance are discussed.
Ballistic spin transport in spin field-effect transistors is studied by taking into account the Rashba spinorbit coupling, interracial scattering, and band mismatch. It is shown that the spin conductance oscillation oscillation with the semiconductor channel length is a superimposition of the Rashba spin precession and spin They have different oscillation periods π / k_R and π / k with k_R the Rashba wavevector and k the Fermi wavevector of these semiconductor channels, and play different parts of slow and rapid oscillations, depending upon the relative magnitude ofπ / k_R and π / k. Only at k = k_R does the spin conductance exhibit oscillations of a single period. Two types of different behaviors of the tunnelling magnetoresistance are discussed.