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利用脉冲激光沉积技术在掺Nb的SrTiO3衬底上制备了氧非正分La0.9Ba0.1MnO3-δ/SrTiO3:Nbp-n异质结.在20—300K这一较宽的温度范围内获得了光滑的整流曲线.整流实验表明:该p-n异质结的正向扩散电压VD随着温度升高在薄膜金属—绝缘转变温度附近出现极大值,表现出与氧正分La0.9Ba0.1MnO3/SrTiO3:Nbp-n结截然不同的温度特性.结合薄膜的电阻-温度实验和能带计算结果,对这一奇异的现象进行了解释.
Oxygen non-normalized La0.9Ba0.1MnO3-δ / SrTiO3: Nbp-n heterojunction was prepared on the NbTiO3-doped SrTiO3 substrate by pulsed laser deposition technique. In the wide temperature range of 20-300K Smooth rectification curve.The rectification experiments show that the forward diffusion voltage VD of the pn heterojunction exhibits a maximum value near the film metal-to-insulator transition temperature as the temperature increases, indicating that the positive diffusion constant of La0.9Ba0.1MnO3 / The distinct temperature dependence of SrTiO3: Nbp-n junction is explained by the resistance-temperature experiment and energy band calculation of the film.