Structure and chemical states of highly eptiaxial CeO_2(001) films grown on SrTiO_3 substrate by las

• 作 者: 张俊 魏峰 杨志民 陈秋云 陈军 王书明
• 机 构: Advanced Electronic Materials Institute,General Research Institute for Nonferrous Metals,Science and
• 出 处: Journal of Rare Earths
• 发表日期: 2013年12期
• 关键词: epitaxial epitaxy ambient ceria Highly HRTEM crystalline attractive ultraviolet

Highly epitaxial and pure(001)-oriented CeO2films were grown on SrTiO3(001)substrates by laser molecular beam epitaxy method without any gas ambient.Layer-by-layer epitaxial growth mode of CeO2was confirmed by in situ reflection high-energy electron diffraction(RHEED)observations.High-resolution X-ray diffraction(HRXRD)and high-resolution transmission electron microscopy(HRTEM)results indicated the STO(100)//CeO2(100),STO[100]//CeO2[110]epitaxial relationship for out-of-plane and in-plane,respectively.The formation mechanism of the epitaxial film was also discussed in the light of a theoretical model.Chemical states of the LMBE ceria films were evaluated and evidences for the existence of Ce3+and oxygen vacancies were presented.

Highly epitaxial and pure (001) -oriented CeO2films were grown on SrTiO3 (001) substrates by laser molecular beam epitaxy method without any gas ambient. Layer-by-layer epitaxial growth mode of CeO2was confirmed by in situ reflection high-energy electron diffraction RHEED) observations.High-resolution X-ray diffraction (HRXRD) and high-resolution transmission electron microscopy (HRTEM) results indicated the STO (100) // CeO2 (100), STO [100] // CeO2 [110] epitaxial relationship for out-of-plane and in-plane, respectively. The formation mechanism of the epitaxial film was also discussed in the light of a theoretical model. Chemical states of the LMBE ceria films were evaluated and evidences for the existence of Ce3 + and oxygen vacancies were presented.