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本文报道用真空蒸发制备含氧硅薄膜的技术，研究了衬底温度对薄膜结构和组分的影响．实验发现在真空为５×１０－３Ｐａ、衬底温度在２８０～４８０℃范围内，随着温度的提高，薄膜由非晶、转化为纳米晶体、再转化为多晶，氧含量也随着温度的提高而增加，这可能是由硅原子在生长表面迁移率的增加和氧化速率的提高所致
This paper reports the technology of vacuum evaporation for the preparation of oxygen-containing silicon thin films. The effects of substrate temperature on the structure and composition of the thin films were investigated. The experimental results show that at a vacuum of 5 × 10-3Pa, the substrate temperature is in the range of 280-480 ℃. With the increase of temperature, the film changes from amorphous to nanocrystalline and then to polycrystalline. The oxygen content also varies with temperature Which may be due to the increase of the mobility of silicon atoms on the growth surface and the increase of the oxidation rate