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为进一步提高碳化硅反射镜基底表面光学质量,满足高质量空间光学系统的应用需求,采用电子枪蒸发纯硅,霍尔离子源喷出的氩离子电离甲烷,并辅以离子辅助沉积的方法在反应烧结碳化硅基底上镀制了表面改性用碳化硅薄膜,并对改性膜层进行了光学抛光处理。XRD测试表明:该工艺条件下制备的碳化硅薄膜为α相。通过高分辨率光学显微镜对抛光后的反应烧结碳化硅基底进行缺陷观察,发现改性抛光后基底表面缺陷和孔洞明显减少。原子力显微镜粗糙度测试的结果表明:改性抛光后基底表面粗糙度降低到了0.867nm(rms)。通过分光光度计测量,证明了改性后抛光的反应烧结碳化硅基底表面的散射还不到未改性而直接抛光的反应烧结碳化硅基底的1/8。在经过液氮和沸水循环5次的温度冲击实验后,薄膜无龟裂和脱落,说明该改性用碳化硅薄膜与基底结合牢固。测试结果表明:该应用霍尔离子源辅助制备碳化硅改性薄膜的方法能够大幅提高碳化硅基底表面光学质量,是进行碳化硅基底表面改性的一种有效的新方法。
In order to further improve the optical quality of the surface of silicon carbide mirrors and meet the application requirements of high quality optical systems, pure argon is evaporated by electron guns. The argon ions ejected from the Hall ion source are ionized by methane and assisted by ion-assisted deposition. Sintered silicon carbide substrate coated with a surface modified silicon carbide film, and the modified film was optically polished. The XRD test shows that the silicon carbide film prepared under this condition is α phase. Through high-resolution optical microscopy on the polished reaction-sintered silicon carbide substrate defect observation found that the surface modification of the substrate surface defects and holes significantly reduced. The results of atomic force microscope roughness test showed that the surface roughness of the substrate after the modified polishing was reduced to 0.867nm (rms). Measured spectrophotometrically, it was demonstrated that scattering of the surface of the reactively sintered silicon carbide substrate after the modification was less than 1/8 of that of the un-modified and directly polished reaction-sintered silicon carbide substrate. After liquid nitrogen and boiling water cycle 5 times the impact of the impact test, the film no cracks and fall off, indicating that the modified silicon carbide film with a solid substrate. The test results show that the method of using the Hall ion source to assist the preparation of the silicon carbide modified film can greatly improve the surface optical quality of the silicon carbide substrate and is an effective new method for surface modification of the silicon carbide substrate.