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研究了一种新型非对称栅隧穿场效应晶体管(AG-TFET),新型结构结合了隧穿场效应晶体管陡峭的亚阈值摆幅与无结器件较大的开态电流的优点,其总电流大小受控于底部沟道势垒和p+区与本征沟道区形成的反偏p-i隧穿结处的带隙宽度以及电场强度。使用Silvaco TCAD软件对器件性能进行了仿真,并对p+区厚度以及底栅栅介质二氧化铪的长度进行了优化。仿真结果表明:新型AG-TFET具有良好的电学特性,在室温下开关电流比可以达到3.3×1010,开态电流为302μA/μm,陡峭的亚阈值摆幅即点亚阈值摆幅为35 m V/dec,平均亚阈值摆幅为54 m V/dec。因此,该新型AG-TFET有望被应用在未来低功耗电路中。
A novel asymmetric gate-tunneling field effect transistor (AG-TFET) is studied. The novel structure combines the steep subthreshold swing of the tunneling FET and the advantage of a larger on-state current without a junction device. The total current The size is governed by the bandgap width at the reverse channel pi tunneling junction formed by the bottom channel barrier and the p + region and the intrinsic channel region as well as the electric field strength. Device performance was simulated using the Silvaco TCAD software and the thickness of the p + region and the length of the hafnium oxide in the bottom gate dielectric were optimized. The simulation results show that the new AG-TFET has good electrical characteristics. The switching current ratio can reach 3.3 × 1010 at room temperature and the on-state current is 302 μA / μm at room temperature. The steep subthreshold swing, ie the point-to-subthreshold swing, is 35 mV / dec with an average subthreshold swing of 54 mV / dec. Therefore, the new AG-TFET is expected to be used in future low-power circuits.