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Mo/Al/Mo结构金属作为TFT的电极,刻蚀后的坡度角和关键尺寸差是重要的参数。明确影响坡度角和关键尺寸差的工艺参数,进而控制坡度角和关键尺寸差,这对工艺制程至关重要。本文探究了膜层结构、曝光工艺、刻蚀工艺对坡度角和关键尺寸差的影响,并对刻蚀工艺进行正交试验设计。实验结果表明:Al膜厚每减小60nm,坡度角下降约9°,关键尺寸差增加0.1μm。曝光工艺中,显影后烘烤会增加光阻粘附力,导致关键尺寸差减小0.1μm,同时坡度角增加约9°。刻蚀工艺中,过刻量每增加10%,坡度角下降3.3°,关键尺寸差增加0.14μm;正交试验结果表明,对关键尺寸差、刻蚀均一性、坡度角影响因素的重要性顺序是:液刀流量>Air Plasma电压>水刀流量。经上述探究表明,坡度角和关键尺寸差呈负相关关系,刻蚀程度增加,关键尺寸差增加,而坡度角则减小。可以通过调节工艺参数对坡度角和关键尺寸差进行控制。
Mo / Al / Mo structure of metal as the TFT electrode, etching the angle of slope and the critical size difference is an important parameter. Clearly affect the slope angle and the critical dimension difference of the process parameters, and then control the slope angle and the key size difference, which is crucial for the process. In this paper, the effects of film structure, exposure process and etching process on the angle of slope and the critical dimension difference were investigated. The orthogonal design of the etching process was also studied. The experimental results show that for every 60nm reduction of Al film thickness, the slope angle decreases about 9 °, and the critical dimension difference increases by 0.1μm. In the exposure process, post-development bake increases photoresist adhesion, resulting in a 0.1 μm reduction in critical dimension and an increase in slope angle of about 9 °. In the etching process, the critical dimension difference increases by 0.14 μm for every 10% increase of over-scale and the slope angle decreases by 3.3 °. The orthogonal test results show that the order of importance of factors influencing key dimension difference, etching uniformity and slope angle YES: Fluid flow> Air Plasma voltage> Water flow. The above studies show that the slope angle and the critical dimension difference is negatively correlated, the degree of etching increases, the critical dimension difference increases, while the slope angle decreases. You can control the slope angle and critical dimension difference by adjusting the process parameters.