论文部分内容阅读
一、引言Kolomiets等人在对硫系玻璃进行了多年研究的基础上曾经指出,对玻璃材料很难通过掺杂的方式改变导电类型和电阻率。因此,多年来人们一直认为非晶态半导体是很难实现掺杂效应的。事实上,几年前做出的材料也大都是高阻的。1975年Spear等人首先实现了用辉光放电技术制备的非晶态硅(a—si)的掺杂效应,这在非晶态硅技术中是一次重要突破。随后,Car/son等人用上述材料做出了转换效率为5.5%的太阳能电池,于是围绕着在太阳能电池中的应用对非晶态硅的研究迅速掀起了一个高潮。目前一般认为制做廉价的太阳能电池最有希望的材料是含氢的非晶态硅,称做硅氢合金(a—si:H)。我们据现有资料和自己的初步实验结果认为非晶态硅氟合金(a—si:F)可能是一种比a—si:H合金更有希望的材科。
I. INTRODUCTION Kolomiets et al. Have pointed out on the basis of years of research on the chalcogenide glass that it is very difficult to change the conductivity type and the resistivity of the glass material by means of doping. Therefore, it has been considered for many years that amorphous semiconductors are difficult to achieve doping effects. In fact, the materials that were made a few years ago are mostly high-impedance. In 1975, Spear and others first realized the doping effect of amorphous silicon (a-si) prepared by glow discharge technology, which is an important breakthrough in the amorphous silicon technology. Subsequently, Car / son et al made a solar cell with a conversion efficiency of 5.5% using the above materials, so the research on amorphous silicon around the application in solar cells quickly took a climax. It is generally believed that the most promising material for making cheap solar cells is hydrogen-containing amorphous silicon, called a-Si: H. According to the available data and our preliminary experimental results, we believe that amorphous silicon-fluorine alloy (a-si: F) may be a more promising material than a-si: H alloy.