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基于原位(in-situ)电可改非易失性半导体存储器(MNOS晶体管)的原理,研制了一种适应式互连技术来组成园片规模集成。本文介绍了互连技术的实验证明。互连的概念还进一步推广到海量半导体存储器的设计,以及组成容错系统所需的适应性表决器的设计。
Based on the principle of in-situ electrical alterable nonvolatile semiconductor memory (MNOS transistor), an adaptive interconnection technology is developed to form the scale integration of the wafer. This article describes the experimental proof of interconnection technology. The concept of interconnects is further extended to the design of mass semiconductor memories and the design of adaptive voting machines required to form fault-tolerant systems.