论文部分内容阅读
本文报道了基于混合物理化学气相沉积法(Hybrid physical-chemical vapordeposition,简称为HPCVD),以硅烷热解出的Si原子作硅源,在SiC衬底上原位生长了一系列硅掺杂MgB_2超导薄膜样品.样品中最大硅掺杂量是9%.与纯净的MgB_2薄膜相比较,掺杂样品的超导临界转变温度T_c没有大幅下降,超导临界电流J_c得到了一定提升.在温度为5K,外加垂直磁场为3T的条件下,样品的临界电流密度最大达到2.7×10~5Acm~(-2).同时上临界场H_(c2)在超导转变温度附近对于温度的变化曲线斜率—dH/dT也有一定的提高.
In this paper, a series of silicon-doped MgB 2 superconductors have been grown in situ on SiC substrates by hybrid physical-chemical vapor deposition (HPCVD) using Si atoms pyrolyzed from silane as the silicon source. The maximum doping amount of silicon in the sample is 9% .Compared with the pure MgB_2 thin film, the superconducting critical transition temperature T_c does not decrease sharply and the superconducting critical current J_c increases to a certain degree.When the temperature is 5K , The critical current density reaches 2.7 × 10 ~ 5Acm ~ (-2) at the maximum when the vertical magnetic field is 3T and the slope of the upper critical field H_ (c2) to temperature near the superconducting transition temperature is -dH / dT also have some improvement.