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采用水溶液缓慢降温法生长了８种掺质ＴＧＳ系列晶体，即ＬＶＡＴＧＳ，ＬＨＩＴＧＳ，ＬＡＳＴＧＳ，ＣＲＴＧＳ，ＤＬＳＥＴＧＳ，ＬＣＹＴＧＳ，ＬＭＥＴＧＳ和ＬＴＹＴＧＳ晶体。系统地研究了这８种掺质ＴＧＳ系列晶体的生长形态，并分别与纯ＴＧＳ进行了对比。利用Ｘ射线粉末衍射与红外光谱分析确定掺质均已进入了晶体。当掺质进入ＴＧＳ晶体后，虽然只引起结构的微小变化，但显著地改变了晶体的生长形态，证明ＴＧＳ晶体结构对掺质分子是非常敏感的。据此为进一步研究掺质ＴＧＳ晶体结构与性能关系，为识别掺质ＴＧＳ晶体结构中掺质分子的取向与堆积方式提供了科学依据
Eight kinds of dopant TGS series crystals, namely LVATGS, LHITGS, LASTGS, CRTGS, DLSETGS, LCYTGS, LMETGS and LTYTGS crystals, were grown by aqueous solution slowly cooling method. The growth morphology of these 8 kinds of dopant TGS series crystals was systematically studied and compared with pure TGS respectively. X-ray powder diffraction and infrared spectroscopy confirmed that the dopants had entered the crystal. When the dopant enters the TGS crystal, it only changes the structure slightly, but changes the morphology of the crystal significantly. It proves that the TGS crystal structure is very sensitive to the dopant molecules. Therefore, to further study the relationship between the structure and performance of doped TGS crystals, it provides a scientific basis for identifying the orientation and accumulation of dopant molecules in the doped TGS crystal structure