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研究了氯掺合（Ｃｌｉｎｃｏｒｐｏｒａｔｉｏｎ）对非晶硅薄膜晶体管（ａ＿Ｓｉ∶Ｈ（∶Ｃｌ）ＴＦＴ）性能的影响。在光照明下，ａ＿Ｓｉ∶Ｈ（∶Ｃｌ）ＴＦＴ的断态漏电流比ａ＿Ｓｉ∶ＨＴＦＴ的小得多，这是因为ａ＿Ｓｉ∶Ｈ（∶Ｃｌ）的光电导率比常规ａ＿Ｓｉ∶Ｈ的小得多的缘故。在［ＳｉＨ２Ｃｌ２］／［ＳｉＨ４］＝０．０４与［ＳｉＨ２Ｃｌ２］／［ＳｉＨ４］＝０．１２之间沉积的ａ＿Ｓｉ∶Ｈ（∶Ｃｌ）薄膜呈现Ｐ型导电，导致更低的光电导。ＴＦＴ利用按［ＳｉＨ２Ｃｌ２］／［ＳｉＨ４］＝０．０４而沉积的ａ＿Ｓｉ∶Ｈ（∶Ｃｌ），呈现出的场效应迁移率为４１ｃｍ２／Ｖｓ，阈值电压为５．５６Ｖ，但是在光照明下，断态漏电流比常规Ｓｉ∶ＨＴＦＴ的要小两个数量级
The effect of Clincorporation on the performance of amorphous silicon thin film transistors (a_Si: H (: Cl) TFTs) was investigated. The off-state leakage current of the a_Si: H (: Cl) TFT is much smaller than a_Si: HTFT under light illumination because the photoconductivity of a_Si: H (: Cl) is much smaller than the conventional a_Si: H The reason. The a_Si: H (: Cl) film deposited between [SiH2Cl2] / [SiH4] = 0.04 and [SiH2Cl2] / [SiH4] = 0.12 exhibits P-type conductivity, resulting in lower photoconductivity. The TFT exhibited a field-effect mobility of 41 cm2 / Vs and a threshold voltage of 5.56 V using a-Si: H (: Cl) deposited as [SiH2Cl2] / [SiH4] = 0.04. However, under light illumination, The off-state leakage current is two orders of magnitude smaller than the conventional Si: HTFT