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用正电子湮没寿命测量方法研究了1011～1013cm-2注量的5和10MeV快中子辐照和1015～1016cm-2注量的氟离子辐照模拟1022～1023cm-2中子辐照在掺杂和非掺杂HB和LECGaAS中产生的辐射损伤。实验结果表明:GaAs的中子辐照效应与生长工艺和掺杂密切相关,LEC生长工艺制备的GaAs比HB工艺
The positron annihilation lifetime measurement method was used to study the effects of 1011 ~ 1013cm-2 fluence on the fast neutron radiation of 10MeV and 10MeV and the fluoride ion irradiation of 1015 ~ 1016cm-2. Radiation damage in hybrid and non-doped HB and LECGaAS. The experimental results show that the neutron irradiation effect of GaAs is closely related to the growth process and the doping. The GaAs HB process prepared by the LEC growth process