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采用稳懋公司150 nm GaAs赝配高电子迁移率晶体管(PHEMT)工艺,设计了一款5~10 GHz单片微波集成电路(MMIC)低噪声放大器(LNA)。该LNA采用三级级联结构,且每一级采用相同的偏压条件,电路的低频工作端依靠电容反馈,高频工作端依靠电阻反馈调节阻抗匹配,从而实现宽带匹配,芯片面积为2.5 mm×1 mm。测试结果表明,工作频率为5~10 GHz,漏极电压为2.3 V,工作电流为70 m A时,LNA的功率增益达到35 dB,平均噪声温度为82 K,在90%工作频段内输入输出回波损耗优于-15 dB,1 dB压缩点输出功率为10.3 dBm,仿真结果与实验结果具有很好的一致性。
A 5 ~ 10 GHz monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) was designed using the steady-state 150 nm GaAs pseudomorphic high electron mobility transistor (PHEMT) process. The LNA has a cascade of three stages and uses the same bias voltage at each stage. The low-frequency operation of the circuit relies on capacitive feedback and the high-frequency operational side relies on resistance feedback to adjust the impedance matching for wideband matching. The chip area is 2.5 mm × 1 mm. The test results show that the LNA achieves a power gain of 35 dB and an average noise temperature of 82 K at an operating frequency of 5 to 10 GHz with a drain voltage of 2.3 V and an operating current of 70 mA. The 90% Return loss better than -15 dB, 1 dB compression point output power of 10.3 dBm, the simulation results and the experimental results have good consistency.