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在文章(1)(2)(3)中报导了在扩散型和合金型碳化硅二极管中呈现有负的微分电阻。但是,在这些文章中描述的样品只具有不大的转折电压,(Vmax)(即上阈值——译者)。 我们获得了较大的转折电压的碳化硅二极管,Vmax/Vmin达2—4(在25℃时) 原始的n—型αsic晶体是从塔什干的一个sic工厂挑选的,它是在实验室中生长的,25℃时的电阻率为0.1-5欧姆—厘米。在实验晶体中,施主(氮)的浓度等于
In article (1) (2) (3) it is reported that there is a negative differential resistance in diffused and alloyed silicon carbide diodes. However, the samples described in these articles have only a small breakover voltage (Vmax) (ie, upper threshold). We got silicon carbide diodes with larger breakover voltage, Vmax / Vmin up to 2-4 (at 25 ° C) The original n-type αsic crystals were picked from a sic factory in Tashkent and grown in a lab The resistivity at 25 ° C is 0.1-5 ohm-cm. In the experimental crystal, the donor (nitrogen) concentration is equal to